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| UNISONIC TECHNOLOGIES CO., LTD 2SA2016 PNP EPITAXIAL PLANAR TRANSISTOR APPLICATIONS * Relay drivers, lamp drivers, motor drivers, strobes. 1 PNP PLANAR TRANSISTOR FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching *High allowable power dissipation. SOT-89 *Pb-free plating product number: 2SA2016L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SA2016-AB3-R 2SA2016L-AB3-R Package SOT-89 Pin Assignment 1 2 3 B C E Packing Tape Reel 2SA2016L-AB3-R (1)Packing Type (2)Package Type (3)Lead Plating (1) R: Tape Reel (2) AB3: SOT-89 (3) L: Lead Free Plating Blank: Pb/Sn , www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd 1 of 6 QW-R208-018.B 2SA2016 ABSOLUTE MAXIMUM RATINGS (Ta=25) PNP PLANAR TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Collector Dissipation Mounted on a ceramic board Pc 1.3 W 2 (250mm *0.8mm) Collector Dissipation (Tc=25C) Pc 3.5 W Collector Current Ic -7 A Collector Current Icp -10 A Base Current IB -1.2 A Junction Temperature TJ 150 C Storage Temperature TSTG -55 to +150 C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Tc=25 ) PARAMETER Collector-to-Base Breakdown Voltage Collector-to- Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain Bandwidth Product Output Capacitance Turn-on Time Storage Time Fall Time SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(SAT) VBE(SAT) fT Cob tON tSTG tF TEST CONDITIONS Ic= -10A, IE=0 Ic= -1mA, RBE= Ic=0, IE= -10A VCB= -40V, IE=0 VEB= -4V, Ic=0 VCE= -2V, Ic= -500mA Ic= -3.5A, IB= -175mA Ic= -2A, IB= -40mA Ic= -2A, IB= -40mA VCE= -10V, Ic= -500mA VCB= -10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit MIN -50 -50 -6 MAX UNIT V V V -0.1 A -0.1 A 560 -0.23 -0.39 V -0.24 -0.40 V -0.83 -1.2 V 290 MHz 50 pF 40 ns 225 ns 25 ns TYP 200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R208-018.B 2SA2016 SWITCHING TIME TEST CIRCUIT PW=20 s D.C. 1% IB2 IB1 VR RB + + OUTPUT RL PNP PLANAR TRANSISTOR INPUT 50 100 F 470 F VBE=5V VCC= -25V -20IB1=20IB2=IC= 2.5A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R208-018.B 2SA2016 TYPICAL CHARACTERISTICS PNP PLANAR TRANSISTOR VCE(SAT)-Ic -10000 7 IC/IB=50 5 3 2 -1000 7 5 3 2 -100 7 5 3 2 -10 -0.01 -10000 7 5 VBE(SAT)-Ic IC/IB=50 Base-to-Emitter Saturation Voltage,VBE(SAT) -V Collector-to-Emitter Saturation Voltage,VCE (SAT) -mV Ta =75 Ta =25 3 2 Ta =-25 -1000 7 5 3 2 -100 -0.01 Ta =25 Ta =-25 Ta =75 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 5 7 -10 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 5 7 -10 Collector Current,Ic -A Cob-VCB 5 3 2 1000 f=1MHz 7 5 Collector Current,Ic -A fT -Ic VCE= -10V Gain-Bandwidth Product,fT-MHz Output Capacitance,Cob-pF 100 7 5 3 2 10 7 5 3 2 5 7-0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 2 35 3 2 100 7 5 3 2 10 5 7-0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 5 7 -10 Collector-to-Base Voltage,VCB-V 2 -10 7 5 3 2 -1.0 7 5 3 2 -0.1 7 5 ASO 2.0 Icp = -10A Collector Current,Ic -A Pc -Ta 0 10 s 1m IC= -7A DC Op er at io s Collector Dissipation,Pc -W 50 s 1.5 1.3 1.0 Collector Current,Ic -A Mo un ted n on a 100ms 10ms 0.5 3 2 Tc = 25 -0.01 2 3 5 7 -10 2 3 5 7 -100 -0.1 2 3 5 7 -1.0 Collector-to-Emitter Voltage,VCE-V ce ram ic bo ard (2 50 mm 2 * 0. 8m m) 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta - UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R208-018.B 2SA2016 TYPICAL CHARACTERISTICS(Cont.) PNP PLANAR TRANSISTOR Ic-VCE -7 -6 Collector Current Ic -A -90mA -40mA -30mA -20mA -10mA Collector Current ,Ic -A -5 -50mA -60mA -70mA -80mA -8 -7 -6 -5 -4 -3 -2 -1 0 0 -0.2 Ta =75 Ic-VBE VCE= -2V -4 -100mA -3 -2 -1 0 0 Ta =25 Ta =-25 IB=0 -0.4 -0.8 -1.2 -1.6 -2.0 Collector -to-Emitter Voltage,VCE-V -0.4 -0.6 -0.8 -1.0 -1.2 Base-to-Emitter Voltage,VBE-V -1.4 hFE -Ic 1000 7 5 DC Current Gain, hFE VCE= -2V Ta =75 3 2 100 7 5 3 2 Ta =25 Collector-to-Emitter Saturation Voltage, VCE(SAT) -mV -1000 7 IC/IB=20 5 3 2 -100 7 5 3 2 VCE(SAT)-Ic Ta =-25 Ta =75 Ta =25 10 -0.01 2 3 5 7-0.1 2 3 5 7 -1.0 Collector Current,Ic -A 2 3 5 7 -10 Ta =-25 -10 7 5 3 2 -1.0 -0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 Collector Current,Ic -A 2 3 5 7 -10 4.0 3.5 Collector Dissipation,Pc -W 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 Pc -Tc 60 80 100 120 Case Temperature, Tc- 140 160 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R208-018.B 2SA2016 PNP PLANAR TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R208-018.B |
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